AnSem - Innovation on chip

Wireless data transmission

Wireless data transmission
Wireless data transmission

Having pioneered CMOS RF technology during the 90's, AnSem has built an excellent track record in successfully integrating CMOS RF technology in GPS, DECT, ISM, Bluetooth and proprietary systems and applications.

More recently AnSem has gained extensive experience in highly linear OFDM based RF front-ends for multiband and multimode wireless networks based upon our Software Defined Radio technology.

AnSem's success in providing integrated CMOS solutions lies in an in-depth understanding of CMOS technology, a broad and comprehensive knowledge on CMOS RF architectures, and a high-level design methodology enabled by proprietary tools.

AnSem's proprietary tools can model a complete receiver or a Frac-N synthesizer and is used to map system level specifications like BER to block level specifications like noise and linearity. As such different architectures and building block topologies can be verified early in the design, resulting in rapid prototyping.  Our deep understanding and experience enables us to design radio architectures that are ideally suited to each customer's application, taking into account the optimum combination of lower component count, lower power consumption, lower power supply levels, lower physical dimensions and lower costs combined with reduced time to market.

Key expertise

  • Integration of systems such as sub 1GHz ISM, GPS, DECT, Bluetooth and WiMAX
  • Advanced architecture techniques such as:
    • Low-IF reception
    • Digital demodulation from low-IF
    • Direct digital modulation of PLLs for transmitters
    • Fractional-N synthesizers
    • Reconfigurable filter design
    • Fully integrated VCOs up to 12GHz
    • Wideband, highly linear LNA & PPA topologies
  • Low loss RF circuit design and layout for highest Q factor
  • Wireless chip developments for applications between 200MHz and 6GHz
  • RF at ultra low power supply levels, down to 0.9V
  • AnSem's technology experience ranges from 0.8µm BiCMOS down to 40nm CMOS

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