AnSem NV
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  > High-speed data communiation in Application

 

0.13 µm XAUI/SONET 2.5-3.125 Gbps SerDes

The Challenge

In 1999, advanced SerDes technology was mainly implemented in stand-alone bipolar ASSPs. With the advent of 0.13 µm CMOS technology, there started a strong move to embed SerDes technology into large digital ASICs. 

Our customer - a major player in the ASIC market - identified very early - on that access to SerDes technology was a key factor to his continued leadership. He also realized that an in-depth understanding of both low jitter (low phase noise) PLL integration and very high speed logic integration, with low noise sensitivity, was a prerequisite to achieving this. 

Our customer tapped into AnSem’s long history of RF CMOS expertise, challenging us to develop a high-speed datacommunication SerDes.

The solution

A multi-core, multi-rate SerDes PHY in 0.13 µm CMOS that achieves very low jitter by using an optimized LC-VCO for TX data generation.

RX is achieved with a bang-bang digital loop filter CDR topology, allowing for complex jitter tracking characteristics.

Result for the customer

  • Early access to high-speed SerDes technology.
  • Silicon proven SerDes core allowing application specific ASIC optimizations.

SerDes technology

Serial communication can be enabled using SerDes (Serializer/Deserializer) systems, in which parallel data is serialized at the transmit end. At the receiver end, the clock and data are recovered from the high-speed serial data, after which it can be de-serialized.

Key Baseline Features

  • Data rates of 1.25-1.6 & 2.5 3.125Gbps
  • Full Speed/Half Speed Modes
  • High Speed 1.8 volt CML I/Os
  • Programmable pre-emphasis
  • 8/10-bit parallel interface 
  • Serial/Parallel loop back BIST
  • 8b/10b encoding/decoding
  • On chip terminations for TX and RX
  • Compatible with AC/DC coupling
  • Low input sensitivity
  • Jitter tolerance Total: 0.65UI
  • Power Dissipation: 125 mW